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This category only includes cookies that ensures basic functionalities and security features of the website. These cookies do not store any personal information. Nov 23, Knowledge Center. Need information? Contact Us. For high-temperature capability, a lower temperature co-efficient and high blocking voltage capabilities satisfy the application demands best.
GaN is superior when it comes to ultimate power density. This is especially the case in applications where construction volume is very limited, such as switched-mode power suppliers in datacenters since power levels increase in a given space. In this case, efficiency and high switching frequencies are combined to push the application to the next level which are impossible to reach by other technologies.
Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications. Infineon offers trusted expertise in all 3 main power semiconductor technologies. Check out how to position them in ACDC applications!
Wide Bandgap Semiconductor Advantages. Wide Bandgap Semiconductor Applications. GaN vs. SiC in Power Electronics. Trainings and Webinars. Working collaboratively with all key wafer makers, IDMs, and the surrounding supply chain to understand customer needs and market requirements, Applied Materials has been developing a range of SiC technology solutions that specifically address the manufacturability issues for this material technology. These include development of dedicated equipment for high temperature ion implant and an SiC chemical mechanical polishing CMP tool capable of doubling wafer throughput while maintaining surface quality.
Jamie Leighton, product line manager at Applied Materials, said the company and a major customer are partnering to boost throughput of the CMP step, thereby reducing the cost of the silicon carbide wafers.
For the mm six-inch SiC substrates, CMP is used to remove surface roughness and create a defect-free layer prior to the high-temperature SiC epitaxial deposition step. Applied and the wafer manufacturer have been able to roughly double the number of wafers per hour for the CMP step. SiC has started its acceleration into the market. With improved manufacturing processes, faster throughput, and economies of scale, the cost of SiC devices will decrease over time.
For additional information contact llew-vaughan-edmunds amat. Service Solutions Supply Chain Solutions. Search form Search. Upgrade your browser for full experience You are using a web browser version that is no longer supported. Nanochip Fab Solutions.
Previous Issues. Wide Band Gap Materials As new systems push for increased power densities and higher efficiencies, silicon technology simply is not efficient enough, and WBG materials need to be introduced that can offer higher performance.
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